7th Oct 2015 08:43
LONDON (Alliance News) - IQE PLC on Wednesday said it has been acknowledged for supplying commercially ready 100mm gallium nitride on silicon carbide epiwafers that were used to produce record results for both high-gain and high-power density transistor devices.
According to the company, that enabled for the first time flexible monolithic microwave integrated circuit design for efficient high-voltage/high-power broadband operation at frequencies ranging from 0-40 GHz.
IQE designs and manufactures advanced semiconductor wafer products used by chip companies to produce the high performance components.
The company said that high frequency microwave capabilities of up to 40GHz are "essential" for satellite communications.
IQE said they will become increasingly important for next generation 5G wireless communications, with the balance between frequency and power giving difficulties to designers to date.
"These results, achieved on our GaN on SiC epiwafers, demonstrate the ability of IQE to produce record-breaking, world leading results on commercial platforms that enable today's leading edge satellite communications and will be essential for enabling next generation wireless technologies," Wayne Johnson, VP of IQE's power business unit, said in a statement.
IQE shares were up 3.7% at 25.41 pence on Wednesday morning.
By Samuel Agini; [email protected]; @samuelagini
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